FDC6561AN: Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ

Description: These N-Channel Logic Level MOSFETs are produced u...
  • These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.
  • Features
  • 2.5 A, 30 V
  • RDS(ON) = 0.095 Ω @ VGS = 10 V
  • RDS(ON) = 0.145 Ω @ VGS = 4.5 V
  • Very fast switching
  • Low gate charge (2.1nC typical
  • SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC6561AN
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 2.5 
  • PD Max (W): 0.96 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=145 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=95 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 2.3 
  • Ciss Typ (pF): 220 
  • Package Type: TSOT-23-6 
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