FDC86244: N-Channel Shielded Gate Power Trench® MOSFET, 150 V, 2.3 A, 144 mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
  • Features
  • Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A
  • Max rDS(on) = 188 mO at VGS = 6 V, ID = 1.9 A
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability in a widely used surface mount package
  • Fast switching speed
  • 100% UIL Tested
  • RoHS Compliant
  • Applications
  • Distribution
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC86244
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Shielded Gate Power Trench® MOSFET, 150 V, 2.3 A, 144 mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 2.3 
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 144 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 2.4 
  • Ciss Typ (pF): 260 
  • Package Type: TSOT-23-6 
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