FDC8886: N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ

Description: This N-Channel MOSFET is produced using an advance...
  • This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on) switching performance.
  • Features
  • Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
  • Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A
  • High performance trench technology for extremely low rDS(on)
  • Fast switching speed
  • RoHS Compliant
  • Applications
  • Notebook PC
  • Technical Documentation & Design Resources
    Availability and Samples
    FDC8886
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power Trench® MOSFET, 30 V, 6.5 A, 23 mΩ
  • Package Type: TSOT-23-6
  • Package Case Outline: 419BL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 20 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 6.5 
  • PD Max (W): 1.6 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 36 
  • RDS(on) Max @ VGS = 10 V (mΩ): 23 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 2.5 
  • Ciss Typ (pF): 348 
  • Package Type: TSOT-23-6 
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