FDD10AN06_F085: N-Channel PowerTrench® MOSFET, 60V, 50A, 10.5mΩ

Description: N-Channel PowerTrench® MOSFET, 60V, 50A...
  • N-Channel PowerTrench® MOSFET, 60V, 50A, 10.5mΩ
  • Features
  • rDS(ON) = 9.4mΩ (Typ.), VGS = 10V, ID = 50A
  • Qg(tot) = 28nC (Typ.), VGS = 10V
  • Low Miller Charge
  • Low Qrr Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDD10AN06A0-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free 
  • Description: N-Channel PowerTrench® MOSFET, 60V, 50A, 10.5mΩ
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 60 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 50 
  • PD Max (W): 135 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 10.5 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 28 37 
  • Ciss Typ (pF): 1840 
  • Package Type: DPAK-3 / TO-252-3 
  • ON Semiconductor Full Web Site