FDD1600N10ALZD: BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 6.8 A, 160 mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.The NP diode is hyperfast rectifier with low forward voltage drop and excellent switching performance.
  • Features
  • RDS(on) = 124 mΩ( Typ.)@ VGS = 10 V, ID = 3.4 A
  • RDS(on) = 175 mΩ ( Typ.)@ VGS = 5.0 V, ID = 2.1 A
  • Low Gate Charge ( Typ.2.78 nC)
  • Low Crss ( Typ. 2.04 pF)
  • Fast Switching
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • RoHS Compliant
  • Applications
  • LED TV
  • Consumer Appliances
  • Technical Documentation & Design Resources
    Availability and Samples
    FDD1600N10ALZD
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 6.8 A, 160 mΩ
  • Package Type: DPAK-5
  • Package Case Outline: 369AL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: with Si Diodes 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 2.8 
  • ID Max (A): 6.8 
  • PD Max (W): 14.9 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 200 
  • RDS(on) Max @ VGS = 10 V (mΩ): 124 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 2.78 
  • Ciss Typ (pF): 169 
  • Package Type: DPAK-5 
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