FDD5614P: 60V P-Channel PowerTrench® MOSFET -15A, 100mΩ

Description: This 60V P-Channel MOSFET uses Fairchild's high vo...
  • This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench® process. It has been optimized for power management applications.
  • Features
  • –15 A, –60 V.
  • RDS(ON) = 100 mΩ @ VGS = –10 V
  • RDS(ON) = 130 mΩ @ VGS = –4.5 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDD5614P
  • Status: Active
  • Compliance: Pb-free 
  • Description: 60V P-Channel PowerTrench® MOSFET -15A, 100mΩ
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Digikey:>1K
  • Mouser:>10K
  • Newark:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -60 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): -3 
  • ID Max (A): -15 
  • PD Max (W): 42 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 130 
  • RDS(on) Max @ VGS = 10 V (mΩ): 100 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 15 
  • Ciss Typ (pF): 759 
  • Package Type: DPAK-3 / TO-252-3 
  • ON Semiconductor Full Web Site