FDD8424H: Dual N & P-Channel PowerTrench® MOSFET, 40V

Description: These dual N and P-channel enhancement mode power ...
  • These dual N and P-channel enhancement mode power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
  • Features
  • N-Channel: 40V, 20A, 24mΩ
  • P-Channel: -40V, -20A, 54mΩ
  • Q1: N-Channel
  • Max. RDS(on) = 24mΩ at VGS = 10V, ID = 9.0A
  • Max. RDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A
  • Q2: P-Channel
  • Max. RDS(on) = 54mΩ at VGS = -10V, ID = -6.5A
  • Max. RDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A
  • Fast switching speed
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDD8424H
  • Status: Active
  • Compliance: Pb-free 
  • Description: Dual N & P-Channel PowerTrench® MOSFET, 40V
  • Package Type: DPAK-5
  • Package Case Outline: 369AL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:>10K
  • Mouser:>10K
  • Newark:>1K
  • Specifications
  • Channel Polarity: Complementary 
  • Configuration: Dual 
  • V(BR)DSS Min (V): ±40 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): ±3 
  • ID Max (A): ±20.0 
  • PD Max (W): N:30, P: 35 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): N:30,P:70 
  • RDS(on) Max @ VGS = 10 V (mΩ): N:24,P:54 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 17 
  • Ciss Typ (pF): N: 750, P: 1000 
  • Package Type: DPAK-5 
  • ON Semiconductor Full Web Site