FDD86567_F085: N-Channel PowerTrench® MOSFET 60 V, 100 A, 3.2 mΩ

Description: N-Channel PowerTrench® MOSFET 60 V, 100...
  • N-Channel PowerTrench® MOSFET 60 V, 100 A, 3.2 mΩ
  • Features
  • Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A
  • Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A
  • UIS Capability
  • RoHS Compliant
  • Qualified to AEC Q101
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDD86567-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 60 V, 100 A, 3.2 mΩ
  • Package Type: DPAK-3 / TO-252-3
  • Package Case Outline: 369AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 60 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 100 
  • PD Max (W): 227 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 3.2 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 63 
  • Ciss Typ (pF): 4950 
  • Package Type: DPAK-3 / TO-252-3 
  • ON Semiconductor Full Web Site