FDG6320C: Dual N & P Channel Digital FET 25V

Description: These dual N & P-Channel logic level enhancement m...
  • These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.
  • Features
  • N-Ch 0.22 A, 25 V,
    RDS(ON) = 4.0 Ω @ VGS= 4.5 V,
    RDS(ON) = 5.0 Ω @ VGS= 2.7 V.
  • P-Ch -0.14 A, -25 V,
    RDS(ON) = 10 Ω @ VGS= -4.5 V,
    RDS(ON) = 13 Ω @ VGS= -2.7 V.
  • Very small package outline SC70-6.
  • Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
  • Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDG6320C
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N & P Channel Digital FET 25V
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6
  • Package Case Outline: 419AD
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>50K
  • Specifications
  • Channel Polarity: Complementary 
  • Configuration: Dual 
  • V(BR)DSS Min (V): ±25 
  • VGS Max (V): -8 
  • VGS(th) Max (V): ±1.5 
  • ID Max (A): N: 0.22, P: -0.14 
  • PD Max (W): 0.3 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): N:5000, P:13000 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): N: 4000, P:10000 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 0.22 
  • Ciss Typ (pF): 12 
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6 
  • ON Semiconductor Full Web Site