FDG6332C: 20V N & P - Channel PowerTrench® MOSFET

Description: The N & P-Channel MOSFETs are produced using Fairc...
  • The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
  • Features
  • Q1 0.7A, 20V
    RDS(ON) = 300mΩ @ VGS = 4.5V
    RDS(ON) = 400mΩ @ VGS = 2.5V
  • Q2 -0.6A, -20V
    RDS(ON) = 420mΩ @ VGS = -4.5V
    RDS(ON) = 630mΩ @ VGS = -2.5V
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • SC70-60 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDG6332C
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 20V N & P - Channel PowerTrench® MOSFET
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6
  • Package Case Outline: 419AD
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>50K
  • Specifications
  • Channel Polarity: Complementary 
  • Configuration: Dual 
  • V(BR)DSS Min (V): ±20 
  • VGS Max (V): 12 
  • VGS(th) Max (V): ±1.5 
  • ID Max (A): N: 0.7, P: -0.6 
  • PD Max (W): 0.3 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): N:400,P:630 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): N: 300, P: 420 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 1.1 
  • Qg Typ @ VGS = 10 V (nC): 1.4 
  • Ciss Typ (pF): 114 
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6 
  • ON Semiconductor Full Web Site