FDG6335N: 20V N-Channel PowerTrench® MOSFET 0.7A, 300mΩ

Description: This N-Channel MOSFET has been designed specifical...
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
  • Features
  • 0.7A, 20V
    RDS(ON) = 300mΩ @ VGS = 4.5V
    RDS(ON) = 400mΩ @ VGS = 2.5V
  • Low gate charge (1.1nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • Compact industry standard SC70-6 surface mount package
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDG6335N
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 20V N-Channel PowerTrench® MOSFET 0.7A, 300mΩ
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6
  • Package Case Outline: 419AD
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 20 
  • VGS Max (V): 12 
  • VGS(th) Max (V): 1.5 
  • ID Max (A): 0.7 
  • PD Max (W): 0.3 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): Q1=Q2=400 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=300 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 1.03 
  • Qg Typ @ VGS = 10 V (nC): 1.1 
  • Ciss Typ (pF): 113 
  • Package Type: SC-88-6 / SC-70-6 / SOT-363-6 
  • ON Semiconductor Full Web Site