FDMA008P20LZ: Single P-Channel PowerTrench® MOSFET -20V, -2.5A, 13mΩ

Description: This device is designed specifically for battery c...
  • This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.It features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
  • Features
  • Max rDS(on) = 13 mΩ at VGS = -4.5 V, ID = -2.5 A
  • Max rDS(on) = 16 mΩ at VGS = -2.5 V, ID = -1.4 A
  • Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -1.0 A
  • Max rDS(on) = 30 mΩ at VGS = -1.5 V, ID = -0.85 A
  • Low Profile - 0.8 mm maximum in the new package MicroFET2x2 mm
  • HBM ESD protection level > 1K V typical (Note 3)
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMA008P20LZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Single P-Channel PowerTrench® MOSFET -20V, -2.5A, 13mΩ
  • Package Type: PQFN-6
  • Package Case Outline: 483AV
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:>1K
  • ON Semiconductor:60,000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V):
  • VGS(th) Max (V): -1.4 
  • ID Max (A): -2.5 
  • PD Max (W): 2.4 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 16 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 13 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 10 
  • Qg Typ @ VGS = 10 V (nC): 28.5 
  • Ciss Typ (pF): 3131 
  • Package Type: PQFN-6 
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