FDMA1029PZ: Dual P-Channel PowerTrench® MOSFET -20V, -3.1A, 95mΩ

Description: This device is designed specifically as a single-p...
  • This device is designed specifically as a single-package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible.
    The MicroFET™ 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
  • Features
  • -3.1 A, -20V
  • RDS(ON) = 95 mΩ @ VGS = -4.5V
  • RDS(ON) = 141 mΩ @ VGS = -2.5V
  • Low profile ?0.8 mm maximum ?in the new packageMicroFET 2x2 mm
  • HBM ESD protection level > 2.5kV (see datasheet Note 3)
  • RoHS Compliant
  • Free from halogenated compounds and antimony oxides
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMA1029PZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual P-Channel PowerTrench® MOSFET -20V, -3.1A, 95mΩ
  • Package Type: WDFN-6
  • Package Case Outline: 511DA
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:>1K
  • Newark:<100
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V): 12 
  • VGS(th) Max (V): -1.5 
  • ID Max (A): -3.1 
  • PD Max (W): 1.4 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): Q1=Q2=141 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=95 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 540 
  • Package Type: WDFN-6 
  • ON Semiconductor Full Web Site