FDMA1430JP: Integrated P-Channel PowerTrench® MOSFET and BJT -30V , -2.9A, 90mΩ

Description: This device is designed specifically as a single p...
  • This device is designed specifically as a single package solution for loadswitching in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch Trench MOSFET in the space saving MicroFET 2x2 package that offers exceptional thermal performance for it's physical size and is well suited to linear mode applications.
  • Features
  • Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A
  • Max rDS(on) = 130 mΩ at VGS = -2.5 V, ID = -2.6 A
  • Max rDS(on) = 170 mΩ at VGS = -1.8 V, ID = -1.7 A
  • Max rDS(on) = 240 mΩ at VGS = -1.5 V, ID = -1 A
  • Low profile - 0.8 mm maximum - in the new package MicroFET 2x2
  • HBM ESD protection level > 2 kV typical (Note 3)
  • RoHS Compliant
  • Applications
  • Loadswitching
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMA1430JP
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Integrated P-Channel PowerTrench® MOSFET and BJT -30V , -2.9A, 90mΩ
  • Package Type: WDFN-6
  • Package Case Outline: 511DA
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: with BJT 
  • V(BR)DSS Min (V): -30 
  • VGS Max (V):
  • VGS(th) Max (V): -1 
  • ID Max (A): -2.9 
  • PD Max (W): 1.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 130 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 90 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 7.9 
  • Qg Typ @ VGS = 10 V (nC): 7.2 
  • Ciss Typ (pF): 438 
  • Package Type: WDFN-6 
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