FDMA410NZT: Ultra Thin N-Channel 1.5 V PowerTrench® MOSFET 20V, 9.5A, 23mΩ

Description: This Single N-Channel MOSFET has been designed usi...
  • This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
    This design is similar to the FDMA410NZ, however it features our new advanced 0.55mm max 2x2 MLP package technology.
  • Features
  • 0.55mm max package height MicroFET 2x2mm Package
  • Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
  • Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
  • Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
  • Max rDS(on) = 50 m: at VGS = 1.5 V, ID = 2.0 A
  • HBM ESD protection level >2.5 kV ( Note 3)
  • Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMA410NZT
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Ultra Thin N-Channel 1.5 V PowerTrench® MOSFET 20V, 9.5A, 23mΩ
  • Package Type: UDFN-6
  • Package Case Outline: 
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

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  • Digikey:<1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 20 
  • VGS Max (V):
  • VGS(th) Max (V):
  • ID Max (A): 9.5 
  • PD Max (W): 2.4 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 29 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 23 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 7.3 
  • Qg Typ @ VGS = 10 V (nC): 10 
  • Ciss Typ (pF): 935 
  • Package Type: UDFN-6 
  • ON Semiconductor Full Web Site