FDMA410NZT: Ultra Thin N-Channel 1.5 V PowerTrench® MOSFET 20V, 9.5A, 23mΩ
Description: This Single N-Channel MOSFET has been designed usi...
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.
This design is similar to the FDMA410NZ, however it features our new advanced 0.55mm max 2x2 MLP package technology.
0.55mm max package height MicroFET 2x2mm Package
Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
Max rDS(on) = 50 m: at VGS = 1.5 V, ID = 2.0 A
HBM ESD protection level >2.5 kV ( Note 3)
Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm
Free from halogenated compounds and antimony oxides
This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Availability and Samples
Compliance: Pb-free Halide free
Description: Ultra Thin N-Channel 1.5 V PowerTrench® MOSFET 20V, 9.5A, 23mΩ
Package Type: UDFN-6
Package Case Outline:
Container Type: REEL
Container Qty: 3000
Market Leadtime (weeks):Contact Factory
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):