FDMA430NZ: Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40mΩ

Description: This Single N-Channel MOSFET has been designed usi...
  • This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.
  • Features
  • RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A
  • RDS(on) = 50mΩ@ VGS = 2.5 V, ID = 4.5A
  • Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm
  • HBM ESD protection level > 2.5k V typical (Note 3)
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMA430NZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Single N-Channel 2.5V Specified PowerTrench® MOSFET 30V, 5.0A, 40mΩ
  • Package Type: WDFN-6
  • Package Case Outline: 511CZ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>10K
  • Mouser:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 12 
  • VGS(th) Max (V): 1.5 
  • ID Max (A):
  • PD Max (W): 2.4 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 50 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 40 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 19 
  • Qg Typ @ VGS = 10 V (nC): 7.3 
  • Ciss Typ (pF): 600 
  • Package Type: WDFN-6 
  • ON Semiconductor Full Web Site