FDMC013P030Z: P-Channel PowerTrench® MOSFET -30V, -54A, 7.0mΩ

Description: This P-Channel MOSFET is produced using Fairchild ...
  • This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been optimized for rDS(on), switching performance and ruggedness.
  • Features
  • Max rDS(on) = 7.0 mΩ at VGS = -10 V, ID = -14 A
  • Max rDS(on) = 12.0 mΩ at VGS = -4.5 V, ID = -10 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • Termination is Lead-free and RoHS Compliant
  • HBM ESD Capability Level> 4 kV Typical (Note 4)
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC013P030Z
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET -30V, -54A, 7.0mΩ
  • Package Type: WDFN-8
  • Package Case Outline: 511DH
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:<1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -30 
  • VGS Max (V): 25 
  • VGS(th) Max (V): -3 
  • ID Max (A): -54 
  • PD Max (W): 30 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 12 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 58 
  • Ciss Typ (pF): 4130 
  • Package Type: WDFN-8 
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