FDMC15N06: N-Channel UltraFET Power MOSFET 55V, 15A, 90mΩ

Description: These N-Channel power MOSFETs are manufactured usi...
  • These N-Channel power MOSFETs are manufactured using the innovative UItraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low voltage bus switches, and power management in portable and battery-operated products.
  • Features
  • RDS(on) = 75 mΩ (Typ.)@ VGS = 10 V, ID = 15 A
  • 100% Avalanche Tested
  • RoHS compliant
  • Applications
  • AC-DC Merchant Power Supply - Servers & Workstations
  • Workstation
  • Server & Mainframe
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC15N06
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel UltraFET Power MOSFET 55V, 15A, 90mΩ
  • Package Type: WDFN-8
  • Package Case Outline: 511DQ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Mouser:>1K
  • ON Semiconductor:6,000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 55 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 15 
  • PD Max (W): 35 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 90 
  • Qg Typ @ VGS = 4.5 V (nC): 18 
  • Qg Typ @ VGS = 10 V (nC): 8.8 
  • Ciss Typ (pF): 265 
  • Package Type: WDFN-8 
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