FDMC3612: N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
  • Features
  • Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3.3 A
  • Max rDS(on) = 122 mΩ at VGS = 6 V, ID = 3.0 A
  • Low Profile - 1 mm max in Power 33
  • 100% UIL Tested
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC3612
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power Trench® MOSFET 100V, 12A, 110mΩ
  • Package Type: WDFN-8
  • Package Case Outline: 511DR
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 12 
  • PD Max (W): 35 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 110 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 7.9 
  • Ciss Typ (pF): 662 
  • Package Type: WDFN-8 
  • ON Semiconductor Full Web Site