FDMC610P: P-Channel PowerTrench® MOSFET -12V. -80A, 3.9mΩ

Description: This P-Channel MOSFET has been designed specifical...
  • This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
  • Features
  • Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
  • Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
  • State-of-the-art switching performance
  • Lower output capacitance, gate resistance, and gate charge boost efficiency
  • Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC610P
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET -12V. -80A, 3.9mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AK
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

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  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -12 
  • VGS Max (V):
  • VGS(th) Max (V): -1 
  • ID Max (A): -80 
  • PD Max (W): 48 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 6.4 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 3.9 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 22 
  • Qg Typ @ VGS = 10 V (nC): 71 
  • Ciss Typ (pF): 890 
  • Package Type: PQFN-8 
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