FDMC6675BZ: P-Channel Power Trench® MOSFET -30V, -20A, 14.4mΩ

Description: The FDMC6675BZ has been designed to minimize losse...
  • The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
  • Features
  • Max rDS(on) = 14.4 mΩ at VGS = -10 V, ID = -9.5 A
  • Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A
  • HBM ESD protection level of 8 kV typical(note 3)
  • Extended VGSS range (-25 V) for battery applications
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • Termination is Lead-free and RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC6675BZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel Power Trench® MOSFET -30V, -20A, 14.4mΩ
  • Package Type: WDFN-8
  • Package Case Outline: 511DQ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -30 
  • VGS Max (V): 25 
  • VGS(th) Max (V): -3 
  • ID Max (A): -20 
  • PD Max (W): 36 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 27 
  • RDS(on) Max @ VGS = 10 V (mΩ): 14.4 
  • Qg Typ @ VGS = 4.5 V (nC): 87 
  • Qg Typ @ VGS = 10 V (nC): 26 
  • Ciss Typ (pF): 2154 
  • Package Type: WDFN-8 
  • ON Semiconductor Full Web Site