FDMC8010: N-Channel PowerTrench® MOSFET 30V, 75A, 1.3mΩ

Description: This N-Channel MOSFET is produced using an advance...
  • This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
  • Features
  • Max RDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
  • Max RDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
  • High performance technology for extremely low RDS(on)
  • Termination is Lead-free and RoHS Compliant
  • Applications
  • AC-DC Merchant Power Supply
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC8010
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 75A, 1.3mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AW
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:>50K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 75 
  • PD Max (W): 54 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 1.8 
  • RDS(on) Max @ VGS = 10 V (mΩ): 1.3 
  • Qg Typ @ VGS = 4.5 V (nC): 32 
  • Qg Typ @ VGS = 10 V (nC): 32 
  • Ciss Typ (pF): 4405 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site