FDMC8321LDC: N-Channel Power Trench® MOSFET 40V, 108A, 2.5mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
  • Features
  • Dual CoolTM Top Side Cooling PQFN package
  • Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 27 A
  • Max rDS(on) = 4.1 mΩ at VGS = 4.5 V, ID = 21 A
  • High performance technology for extremely low rDS(on)
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC8321LDC
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power Trench® MOSFET 40V, 108A, 2.5mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 40 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 108 
  • PD Max (W): 56 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 4.1 
  • RDS(on) Max @ VGS = 10 V (mΩ): 2.5 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 22 
  • Ciss Typ (pF): 2832 
  • Package Type: PQFN-8 
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