FDMC8588DC: N-Channel PowerTrench® MOSFET 25V, 40A, 5.7mΩ

Description: This N-Channel MOSFET has been designed specifical...
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) , fast switching speed and body diode reverse recovery performance.
  • Features
  • Dual Cool™ 33 PowerTrench® MOSFET
  • Max RDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 17 A
  • State-of-the-art switching performance
  • Lower output capacitance, gate resistance, and gate charge boost efficiency
  • Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
  • RoHS Compliant
  • Applications
  • Energy Generation & Distribution
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC8588DC
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 25V, 40A, 5.7mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AL
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):13 to 16
  • Arrow:0
  • Digikey:<100
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 25 
  • VGS Max (V): 12 
  • VGS(th) Max (V): 1.8 
  • ID Max (A): 40 
  • PD Max (W): 41 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 5.7 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 19.4 
  • Qg Typ @ VGS = 10 V (nC): 12 
  • Ciss Typ (pF): 1695 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site