FDMC86102LZ: N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ

Description: This N-Channel logic Level MOSFETs are produced us...
  • This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
  • Features
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A
  • Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A
  • HBM ESD protection level > 6 KV typical (Note 4)
  • 100% UIL Tested
  • RoHS Compliant
  • Applications
  • Consumer
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC86102LZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Shielded Gate Power Trench® MOSFET 100V, 22A, 24mΩ
  • Package Type: WDFN-8
  • Package Case Outline: 511DH
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<100
  • Mouser:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 2.2 
  • ID Max (A): 22 
  • PD Max (W): 41 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 35 
  • RDS(on) Max @ VGS = 10 V (mΩ): 24 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 7.6 
  • Ciss Typ (pF): 969 
  • Package Type: WDFN-8 
  • ON Semiconductor Full Web Site