FDMC86139P: P-Channel PowerTrench® MOSFET -100V, -15A, 67mΩ

Description: This P-Channel MOSFET is produced using Fairchild ...
  • This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
  • Features
  • Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A
  • Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A
  • Very low RDS-on mid voltage P channel silicon technology optimised for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL Tested
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMC86139P
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET -100V, -15A, 67mΩ
  • Package Type: WDFN-8
  • Package Case Outline: 511DH
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -100 
  • VGS Max (V): ±25 
  • VGS(th) Max (V): -4 
  • ID Max (A): -15 
  • PD Max (W): 40 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 67 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 9.8 
  • Ciss Typ (pF): 1001 
  • Package Type: WDFN-8 
  • ON Semiconductor Full Web Site