FDMD8430: PowerTrench® MOSFET, Dual N-Channel, 30V, 28A, 2.12mΩ

Description: This package integrates two N-Channel devices conn...
  • This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. It provides a very small footprint (3.3 x 5 mm) for higher power density.
  • Features
  • Max rDS(on) = 2.12 mΩ at VGS = 10 V, ID = 28 A
  • Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 24 A
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification
  • 100% UIL Tested
  • Termination is Lead-free and RoHS compliant
  • Applications
  • Isolated DC−DC Synchronous Rectifiers
  • Common Ground Load Switches
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMD8430
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: PowerTrench® MOSFET, Dual N-Channel, 30V, 28A, 2.12mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AU
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 95 
  • PD Max (W): 29 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):  
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=2.95 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=2.12 
  • Qg Typ @ VGS = 4.5 V (nC): 25 
  • Qg Typ @ VGS = 10 V (nC): 52 
  • Ciss Typ (pF): 3595 
  • Package Type: PQFN-8 
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