FDMD8630: Dual N-Channel PowerTrench® MOSFET 30 V, 167 A, 1.0 mΩ

Description: This package integrates two N-Channel devices ...
  • This package integrates two N-Channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.
  • Features
  • Common Source Configuration to Eliminate PCB Routing
  • Large Source Pad on Bottom of Package for Enhanced Thermals
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification
  • Applications
  • Isolated DC-DC Synchronous Rectifier
  • Common Ground Load Switches
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMD8630
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N-Channel PowerTrench® MOSFET 30 V, 167 A, 1.0 mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V):
  • VGS(th) Max (V):
  • ID Max (A): 167 
  • PD Max (W): 43 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=1.3 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=1 
  • Qg Typ @ VGS = 4.5 V (nC): 8.8 
  • Qg Typ @ VGS = 10 V (nC): 46 
  • Ciss Typ (pF): 7090 
  • Package Type: PQFN-8 
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