FDMD8680: Dual N-Channel PowerTrench® MOSFET 60V, 66A, 4.7mΩ

Description: This package integrates to N-channel devices conne...
  • This package integrates to N-channel devices connected internally in common-source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.
  • Features
  • Common source configuration to Eliminate PCB Routing
  • Large Source Pad on Bottom of Package for Enhanced Thermals
  • Max rDS(on) = 4.7 mΩ at VGS = = 10 V, ID = 16 A
  • Max rDS(on) = 6.4 mΩ at VGS = = 8 V, ID = 14 A
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification
  • 100% UIL Tested
  • Termination is Lead-free and RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMD8680
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N-Channel PowerTrench® MOSFET 60V, 66A, 4.7mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Mouser:<1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 80 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 66 
  • PD Max (W): 39 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=4.7 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 53 
  • Ciss Typ (pF): 3805 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site