FDME1024NZT: Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ

Description: This device is designed specifically as a single p...
  • This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.
  • Features
  • Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
  • Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
  • Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
  • Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • HBM ESD protection level > 1600V (Note 3)
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDME1024NZT
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N-Channel Power Trench® MOSFET 20V, 3.8A, 66mΩ
  • Package Type: UDFN-6
  • Package Case Outline: 517DW
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 5000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>10K
  • Mouser:>50K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 20 
  • VGS Max (V):
  • VGS(th) Max (V):
  • ID Max (A): 3.8 
  • PD Max (W): 1.4 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): Q1=Q2=86 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=66 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 20 
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 225 
  • Package Type: UDFN-6 
  • ON Semiconductor Full Web Site