FDME905PT: P-Channel PowerTrench® MOSFET -12V, -8A, 22mΩ

Description: This device is designed specifically for battery c...
  • This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance.
    The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
  • Features
  • Max rDS(on) = 22 mΩ at VGS = -4.5 V, ID = -8 A
  • Max rDS(on) = 26 mΩ at VGS = -2.5 V, ID = -7.3 A
  • Max rDS(on) = 97 mΩ at VGS = -1.8 V, ID = -3.8 A
  • Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
  • Free from halogenated compounds and antimony oxides
  • RoHS Compliant
  • Applications
  • Mobile Handsets
  • Technical Documentation & Design Resources
    Availability and Samples
    FDME905PT
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET -12V, -8A, 22mΩ
  • Package Type: UDFN-6
  • Package Case Outline: 517DV
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 5000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -12 
  • VGS Max (V):
  • VGS(th) Max (V): -1 
  • ID Max (A): -8 
  • PD Max (W): 2.1 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 26 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 22 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 5.5 
  • Qg Typ @ VGS = 10 V (nC): 14 
  • Ciss Typ (pF): 1740 
  • Package Type: UDFN-6 
  • ON Semiconductor Full Web Site