FDMQ8203: Dual N-Channel and Dual P-Channel PowerTrench® MOSFET, GreenBridge™ Series of High-Efficiency Bridge Rectifiers

Description: This quad mosfet solution provides ten-fold improv...
  • This quad mosfet solution provides ten-fold improvement in power dissipation over diode bridge.
  • Features
  • Q1/Q4: N-Channel
    Max rDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
    Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
  • Substantial efficiency benefit in PD solutions
  • Q2/Q3: P-Channel
    Max rDS(on) = 190 mΩ at VGS = -10 V, ID = -2.3 A
    Max rDS(on) = 235 mΩ at VGS = -4.5 V, ID = -2.1 A
  • RoHS Compliant
  • Applications
  • Central Office
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMQ8203
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N-Channel and Dual P-Channel PowerTrench® MOSFET, GreenBridge™ Series of High-Efficiency Bridge Rectifiers
  • Package Type: WDFN-12
  • Package Case Outline: 511CS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: Complementary 
  • Configuration: Dual 
  • V(BR)DSS Min (V): ±100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): Q1,Q4:4.0, Q2,Q3: -3.0 
  • ID Max (A): N: 6.0, P: -6.0 
  • PD Max (W): Q1: 22, Q2:37 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): N: 110, P: 190 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 6.4 
  • Ciss Typ (pF): Q1/Q4= 158, Q2/Q3: 639 
  • Package Type: WDFN-12 
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