FDMS003N08C: N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 147 A, 3.1 mΩ

Description: This N-Channel MV MOSFET is produced using ON Semi...
  • This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with best in class soft body diode.
  • Features
  • Low RDS(on) and Qg - Minimizes conduction and switching losses
  • Very Low Qrr - reduces EMI and Voltage Overshoot
  • Lowers switching noise / EMI
  • 100% UIL tested
  • Applications
  • High Performance DC-DC converters
  • AC-DC Synchronous Rectification
  • Motor control
  • End Products
  • Netcom/Telecom
  • AC Adapter
  • Power Tools
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS003N08C
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 147 A, 3.1 mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AF
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 80 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 147 
  • PD Max (W): 2.7 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 8.1 
  • RDS(on) Max @ VGS = 10 V (mΩ): 3.1 
  • Qg Typ @ VGS = 4.5 V (nC): 33 
  • Qg Typ @ VGS = 10 V (nC): 52 
  • Ciss Typ (pF): 3820 
  • Package Type: PQFN-8 
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