FDMS2672: N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ

Description: UItraFET devices combine characteristics that enab...
  • UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
  • Features
  • Max rDS(on) = 77mΩ at VGS = 10V, ID = 3.7A
  • Max rDS(on) = 88mΩ at VGS = 6V, ID = 3.5A
  • Low Miller Charge
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS2672
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel UltraFET Trench® MOSFET 200V, 20A, 77mΩ
  • Package Type: DFN-8
  • Package Case Outline: 506DP
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):17 to 20
  • Arrow:0
  • Digikey:>1K
  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 200 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 20 
  • PD Max (W): 78 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 77 
  • Qg Typ @ VGS = 4.5 V (nC): 28 
  • Qg Typ @ VGS = 10 V (nC): 30 
  • Ciss Typ (pF): 1740 
  • Package Type: DFN-8 
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