FDMS2D4N03S: N-Channel PowerTrench® SyncFETTM 30V, 163A, 1.8mΩ

Description: The FDMS2D4N03S has been designed to minimize loss...
  • The FDMS2D4N03S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode.
  • Features
  • Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 28 A
  • Max rDS(on) = 2.34 mΩ at VGS = 4.5 V, ID = 26 A
  • High Performance Technology for Extremely Low rDS(on)
  • SyncFETTM Schottky Body Diode
  • 100% UIL Tested
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS2D4N03S
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® SyncFETTM 30V, 163A, 1.8mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AE
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 16 
  • VGS(th) Max (V):
  • ID Max (A): 163 
  • PD Max (W): 74 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 2.34 
  • RDS(on) Max @ VGS = 10 V (mΩ): 1.8 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 28 
  • Ciss Typ (pF): 4670 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site