FDMS3606AS: 30V Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage

Description: This device includes two specialized N-Channel MOS...
  • This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
  • Features
  • Q1: N-Channel
    Max RDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
    Max RDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
  • Q2: N-Channel
    Max RDS(on) = 1.9 mΩat VGS = 10 V, ID = 27 A
    Max RDS(on) = 2.8 mΩat VGS = 4.5 V, ID = 23 A
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS Compliant
  • Applications
  • Notebook PC
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS3606AS
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 30V Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage
  • Package Type: PQFN-8
  • Package Case Outline: 483AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Mouser:>1K
  • Newark:<1K
  • ON Semiconductor:75,000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V): Q1: 2.7 , Q2: 3.0 
  • ID Max (A): Q1: 13.0, Q2: 27.0 
  • PD Max (W): Q1:2.2, Q2: 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1: 11.0, Q2: 2.8 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1: 8, Q2: 1.9 
  • Qg Typ @ VGS = 4.5 V (nC): 27 
  • Qg Typ @ VGS = 10 V (nC): 27 
  • Ciss Typ (pF): 4129 
  • Package Type: PQFN-8 
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