FDMS3626S: 25V Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET

Description: This device includes two specialized N-Channel MOS...
  • This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
  • Features
  • Q1: N-Channel
    Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A
    Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A
  • Q2: N-Channel
    Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A
    Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A
  • Low inductance packaging shortens rise/fall times, resulting in lower switching lossses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS Compliant
  • Applications
  • Server
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS3626S
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 25V Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET
  • Package Type: PQFN-8
  • Package Case Outline: 483AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

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  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 25 
  • VGS Max (V): 12 
  • VGS(th) Max (V): Q1: 2.0, Q2: 2.2 
  • ID Max (A): Q1: 17.5, Q2: 25.0 
  • PD Max (W): Q1:2.2, Q2: 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1: 5.7, Q2: 3.2 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1: 5.0, Q2: 2.6 
  • Qg Typ @ VGS = 4.5 V (nC): 29 
  • Qg Typ @ VGS = 10 V (nC): 19 
  • Ciss Typ (pF): 2545 
  • Package Type: PQFN-8 
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