FDMS3660AS: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V

Description: This device includes two specialized N-Channel MOS...
  • This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET™ (Q2) have been designed to provide optimal power efficiency.
  • Features
  • Q1: N-Channel
    Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
    Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
  • Q2: N-Channel
    Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
    Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
  • Low inductance packaging shortens rise/fall times, resulting in lower switching losses
  • MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
  • RoHS Compliant
  • Applications
  • Computing
  • Communications
  • General Purpose Point of Load
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS3660AS
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
  • Package Type: PQFN-8
  • Package Case Outline: 483AJ
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 12 
  • VGS(th) Max (V): Q1: 2.7, Q2: 2.5 
  • ID Max (A): Q1: 13.0, Q2: 30.0 
  • PD Max (W): Q1:2.2, Q2: 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1: 11.0, Q2: 2.2 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1: 8, Q2: 1.8 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 30 
  • Ciss Typ (pF): 4150 
  • Package Type: PQFN-8 
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