FDMS8350LET40: N-Channel PowerTrench® MOSFET 40V, 300A, 0.85mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
  • Features
  • Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A
  • Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A
  • Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency
  • MSL1 Robust Package Design
  • 100% UIL Tested
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS8350LET40
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 40V, 300A, 0.85mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AG
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 40 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 300 
  • PD Max (W): 125 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 1.2 
  • RDS(on) Max @ VGS = 10 V (mΩ): 0.85 
  • Qg Typ @ VGS = 4.5 V (nC): 38 
  • Qg Typ @ VGS = 10 V (nC): 73 
  • Ciss Typ (pF): 11850 
  • Package Type: PQFN-8 
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