FDMS8558SDC: N-Channel PowerTrench® SyncFET™ 25V, 90A, 1.5mΩ

Description: This N-Channel SyncFET™ is produced using Fairchil...
  • This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
  • Features
  • Dual Cool™ PQFN package
  • Max rDS(on) = 1.5 mΩ at VGS = 10 V, ID = 38 A
  • Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 36 A
  • High performance technology for extremely low rDS(on)
  • SyncFET™ Schottky Body Diode
  • RoHS Compliant
  • Applications
  • Energy Generation & Distribution
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS8558SDC
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® SyncFET™ 25V, 90A, 1.5mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483BK
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:>1K
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 25 
  • VGS Max (V): 12 
  • VGS(th) Max (V): 2.2 
  • ID Max (A): 90 
  • PD Max (W): 89 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 1.7 
  • RDS(on) Max @ VGS = 10 V (mΩ): 1.5 
  • Qg Typ @ VGS = 4.5 V (nC): 22 
  • Qg Typ @ VGS = 10 V (nC): 38 
  • Ciss Typ (pF): 5118 
  • Package Type: PQFN-8 
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