FDMS86150ET100: N-Channel Shielded Gate PowerTrench® MOSFET 100V, 128A, 4.85mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
  • Features
  • Extended TJ rating to 175°C
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 4.85 mΩ at VGS = 10 V, ID = 16 A
  • Max rDS(on) = 7.8 mΩ at VGS = 6 V, ID = 13 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
  • Applications
  • DC-DC Merchant Power Supply
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS86150ET100
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Shielded Gate PowerTrench® MOSFET 100V, 128A, 4.85mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AG
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:<100
  • Mouser:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 128 
  • PD Max (W): 187 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 4.85 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 25 
  • Ciss Typ (pF): 3055 
  • Package Type: PQFN-8 
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