FDMS86255ET150: N-Channel Shielded Gate PowerTrench® MOSFET 150V, 63A, 12.4mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
  • Features
  • Extended TJ rating to 175°C
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A
  • Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS86255ET150
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Shielded Gate PowerTrench® MOSFET 150V, 63A, 12.4mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AG
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 150 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 63 
  • PD Max (W): 136 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 12.4 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 29 
  • Ciss Typ (pF): 3200 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site