FDMS86263P: P-Channel PowerTrench® MOSFET -150V, -22A, 53mΩ

Description: This P-Channel MOSFET is produced using Fairchild ...
  • This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
  • Features
  • Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
  • Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
  • Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg
  • This product is optimised for fast switching applications as well as load switch applications
  • 100% UIL tested
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS86263P
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET -150V, -22A, 53mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AE
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -150 
  • VGS Max (V): ±25 
  • VGS(th) Max (V): -4 
  • ID Max (A): -22 
  • PD Max (W): 384 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 53 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 29 
  • Ciss Typ (pF): 2935 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site