FDMS8680: N-Channel PowerTrench® MOSFET 30V, 35A, 7.0mΩ

Description: The FDMS8680 has been designed to minimize losses ...
  • The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
  • Features
  • Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14 A
  • Max rDS(on) = 11.0 mΩ at VGS = 4.5 V, ID = 11.5 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • RoHS compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Low Side for Synchronous Buck to Power Core Processor
  • Secondary Side Synchronous Rectifier
  • Low Side Switch in POL DC/DC Converter
  • Oring FET / Load Switch
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS8680
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 35A, 7.0mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AE
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Mouser:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 35 
  • PD Max (W): 50 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 11 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 13 
  • Qg Typ @ VGS = 10 V (nC): 10 
  • Ciss Typ (pF): 1195 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site