FDMS8880: N-Channel PowerTrench® MOSFET 30V, 21A, 8.5mΩ

Description: The FDMS8880 has been designed to minimize losses ...
  • The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
  • Features
  • Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID = 13.5 A
  • Max rDS(on) = 13.0 mΩ at VGS = 4.5 V, ID = 10.9 A
  • Advanced Package and Silicon combinationfor low rDS(on) and high efficiency
  • MSL1 robust package design
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Synchronous Buck for Notebook Vcore and Server
  • Notebook Battery Pack
  • Load Switch
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS8880
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 21A, 8.5mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AE
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 21 
  • PD Max (W): 42 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 13 
  • RDS(on) Max @ VGS = 10 V (mΩ): 8.5 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 13 
  • Ciss Typ (pF): 1195 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site