FDMS8888: N-Channel PowerTrench® MOSFET 30V, 21A, 9.5m

Description: The FDMS8888 has been designed to minimixe losses ...
  • The FDMS8888 has been designed to minimixe losses in power conversion application. The Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
  • Features
  • Max rDS(on) = 9.5 mΩ at VGS = 10 V, ID = 13.5 A
  • Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10.9 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • MSL1 robust package design
  • RoHS Compliant
  • Applications
  • Notebook PC
  • Synchronous Buck for Notebook Vcore and Server
  • Notebook Battery Pack
  • Load Switch
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS8888
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 21A, 9.5m
  • Package Type: PQFN-8
  • Package Case Outline: 483AE
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:>1K
  • ON Semiconductor:343,159
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 21 
  • PD Max (W): 42 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 14.5 
  • RDS(on) Max @ VGS = 10 V (mΩ): 9.5 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 13 
  • Ciss Typ (pF): 1195 
  • Package Type: PQFN-8 
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