FDN339AN: N-Channel 2.5V Specified PowerTrench® MOSFET20V, 3A, 35mΩ

Description: This N-Channel 2.5V specified MOSFET is produced u...
  • This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
  • Features
  • 3 A, 20 V
  • RDS(ON) = 0.035 Ω @ VGS = 4.5 V
  • RDS(ON) = 0.050 Ω @ VGS = 2.5 V.
  • Low gate charge (7nC typical).
  • High performance trench technology for extremely low RDS(ON) .
  • High power and current handling capability.
  • Applications
  • This product is general usage and suitable for many different applications.
  • DC/DC converter
  • Load Switch
  • Technical Documentation & Design Resources
    Availability and Samples
    FDN339AN
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel 2.5V Specified PowerTrench® MOSFET20V, 3A, 35mΩ
  • Package Type: SOT-23-3
  • Package Case Outline: 527AG
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

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  • Mouser:>10K
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  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 20 
  • VGS Max (V):
  • VGS(th) Max (V): 1.5 
  • ID Max (A):
  • PD Max (W): 0.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 50 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 35 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 6.3 
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 700 
  • Package Type: SOT-23-3 
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