FDN86501LZ: N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.
  • Features
  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 116 mΩ at VGS = 10 V, ID = 2.6 A
  • Max rDS(on) = 170 mΩ at VGS = 4.5 V, ID = 2.1 A
  • High Performance Trench Technology for Extremely Low rDS(on)
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • Fast Switching Speed
  • 100% UIL Tested
  • RoHS Compliant
  • Applications
  • Primary DC-DC Switch
  • Load Switch
  • Technical Documentation & Design Resources
    Availability and Samples
    FDN86501LZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 2.6 A, 116 mΩ
  • Package Type: SOT-23-3
  • Package Case Outline: 527AG
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 60 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 2.4 
  • ID Max (A): 2.6 
  • PD Max (W): 1.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 173 
  • RDS(on) Max @ VGS = 10 V (mΩ): 116 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 1.9 
  • Ciss Typ (pF): 236 
  • Package Type: SOT-23-3 
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