FDP2710: N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ

Description: This N-Channel MOSFET is produced using Fairchild ...
  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
  • Features
  • RDS(on) = 36.3mΩ ( Typ.) @ VGS = 10V, ID = 25A
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(on)
  • High power and current handling capability
  • RoHS compliant
  • Applications
  • Consumer Appliances
  • Synchronous Rectification
  • Technical Documentation & Design Resources
    Availability and Samples
    FDP2710
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel PowerTrench® MOSFET 250V, 50A, 42.5mΩ
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:<1K
  • Mouser:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 250 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 50 
  • PD Max (W): 260 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 42.5 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 78 
  • Ciss Typ (pF): 5470 
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site