FDP5800: N-Channel PowerTrench® MOSFET, Logic Level, 60V, 80A, 6mΩ

Description: This N-Channel MOSFET is produced using an advance...
  • This N-Channel MOSFET is produced using an advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
  • Features
  • RDS(on) = 4.6mΩ (Typ.) @ VGS = 10V, ID = 80A
  • High performance trench technology for extermly low RDS(on)
  • Low Gate Charge
  • High power and current handing capability
  • RoHs Compliant
  • Applications
  • AC-DC Merchant Power Supply
  • Motion Control - Industrial Motor
  • Other Industrial
  • Uninterruptible Power Supply
  • Power Tools
  • Synchronous Rectification
  • Battery Protection Circuit
  • Technical Documentation & Design Resources
    Availability and Samples
    FDP5800
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel PowerTrench® MOSFET, Logic Level, 60V, 80A, 6mΩ
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:<1K
  • Digikey:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 60 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 80 
  • PD Max (W): 242 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 7.2 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 17 
  • Qg Typ @ VGS = 10 V (nC): 58 
  • Ciss Typ (pF): 6890 
  • Package Type: TO-220-3 
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